1 www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0 FDA59N25 n-channel unifet tm mosfet FDA59N25 n-channel unifet tm mosfet 250 v, 59 a, 49 m? ? r ds(on) = 49 m? (max.) @ v gs = 10 v , i d = 29.5 a low gate charge (t yp. 63 nc) low c rss (typ. 70 pf) 100% avalanche t ested description unifet tm mosfet is fairchild semiconductor ? s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device family is suitable for switching power conv erter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. absolute maximum ratings thermal characteristics { { { z z z { { { z z z s d g to-3p n symbol parameter FDA59N25 unit v dss drain-source voltage 250 v v ds(avalanche) repetitive avalanche voltage (note 1, 2) 300 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 59 35 a a i dm drain current - pulsed (note 1) 236 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1458 mj i ar avalanche current (note 1) 59 a e ar repetitive avalanche energy (note 1) 39.2 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 392 3.2 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter FDA59N25 unit r jc thermal resistance, junction-to-case , max. 0.32 c/w r cs thermal resistance, case-to-sink , typ. 0.24 c/w r ja thermal resistance, junction-to-ambient , max. 40 c/w features applications pdp tv uninterruptible power supply ac-dc power supply april 2013 g d s
2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.67mh, i as = 59a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 59a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity FDA59N25 FDA59N25 to-3p n -- -- 30 symbol parameter conditions min. typ. max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c- -0 . 2 5- -v / c i dss zero gate voltage drain current v ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 . 0 - - 5 . 0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 29.5a -- 0.041 0.049 ? g fs forward transconductance v ds = 40v, i d = 29.5a (note 4) -- 45 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 3090 4020 pf c oss output capacitance -- 630 820 pf c rss reverse transfer capacitance -- 70 110 pf switching characteristics t d(on) turn-on delay time v dd = 125v, i d = 59a r g = 25 ? (note 4, 5) -- 70 150 ns t r turn-on rise time -- 480 970 ns t d(off) turn-off delay time -- 90 190 ns t f turn-off fall time -- 170 350 ns q g total gate charge v ds = 200v, i d = 59a v gs = 10v (note 4, 5) -- 63 82 nc q gs gate-source charge -- 18.5 -- nc q gd gate-drain charge -- 30 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 59 a i sm maximum pulsed drain-source diode forward current -- -- 236 a v sd drain-source diode forward voltage v gs = 0v, i s = 59a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 59a di f /dt =100a/ s (note 4) -- 190 -- ns q rr reverse recovery charge -- 4.4 -- c FDA59N25 n-channel unifet tm mosfet www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v bottom : 6.0 v * notes : 1. 250 s pulse test 2. t c = 25 c i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 12 10 0 10 1 10 2 150 c 25 c -55 c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 25 50 75 100 125 150 175 0.00 0.03 0.06 0.09 0.12 0.15 v gs = 20v v gs = 10v * note : t j = 25 c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 c * notes : 1. v gs = 0v 2. 250 s pulse test 25 c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 2000 4000 6000 8000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1 . v gs = 0 v 2 . f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 10203040506070 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v * note : i d = 59a v gs , gate-source voltage [v] q g , total gate charge [nc] FDA59N25 n-channel unifet tm mosfet www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1 . v gs = 0 v 2 . i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1 . v gs = 10 v 2 . i d = 29.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 3 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 i d , drain current [a] t c , case temperature [ c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * notes : 1. z jc (t) = 0.32 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 FDA59N25 n-channel unifet tm mosfet www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
5 charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms FDA59N25 n-channel unifet tm mosfet www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- FDA59N25 n-channel unifet tm mosfet www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
mechanical dimensions dimensions in millimeters to-3pn FDA59N25 n-channel unifet tm mosfet 7 www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ? FDA59N25 n-channel unifet tm mosfet 8 www.fairchildsemi.com ?2005 fairchild semiconductor corporation FDA59N25 rev. c0
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